1/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.04 - rev.a 2.5v drive nch mosfet RSM002N06 ? structure ? dimensions (unit : mm) silicon n-c hannel mosfet ? features 1) high speed switing. 2) small package(vmt3). 3) low voltage drive(2.5v drive). ? application switching ? packaging specifications ? inner circuit package taping code t2l basic ordering unit (pieces) 8000 RSM002N06 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 250 ma pulsed i dp ? 1a continuous i s 125 ma pulsed i sp 1a power dissipation p d 150 mw channel temperature tch 150 ? c range of storage temperature tstg ? 55 to +150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 each terminal mounted on a recommended land. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 833 ? c / w * each terminal mounted on a recommended land. parameter type source current (body diode) drain current parameter *2 *1 *1 * *2 *1 vmt3 a bbreviated symbol : rk ? 2 ? 1 (1) (2) (3) ? 1 esd protection diode ? 2 body diode (1) gate (2) source (3) drain
2/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.04 - rev.a data sheet RSM002N06 ? electrical characteristics (ta = 25 ? c) ? symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =60v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.3 v v ds =10v, i d =1ma -1.72.4 i d =250ma, v gs =10v -2.13.0 i d =250ma, v gs =4.5 v -2.33.2 i d =250ma, v gs =4.0 v - 3.0 12.0 i d =10ma, v gs =2.5v forward transfer admittance l y fs l 0.25 - - s i d =250ma, v ds =10v input capacitance c iss -15-pfv ds =25v output capacitance c oss -4.5-pfv gs =0v reverse transfer capacitance c rss -2.0-pff=1mhz turn-on delay time t d(on) -3.5-nsi d =100ma, v dd 30v rise time t r -5-nsv gs =10v turn-off delay time t d(off) -18-nsr l 300 ? fall time t f -28-nsr g =10 ? *pulsed conditions parameter static drain-source on-state resistance r ds (on) ? * * * * * * * * * * * * * * * ? body diode characteristics (source-drain) (ta = 25 ? c) ? symbol min. typ. max. unit forward voltage v sd --1.2vi s =250ma, v gs =0v *pulsed conditions parameter *
3/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.04 - rev.a data sheet RSM002N06 ? electrical characteristic curves 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ? c ta=75 ? c ta=25 ? c ta= -25 ? c v gs = 4.5v pulsed 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ? c ta=75 ? c ta=25 ? c ta= -25 ? c v gs = 10v pulsed 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ? c ta=75 ? c ta=25 ? c ta= -25 ? c v gs = 2.5v pulsed 0.1 1 10 100 0.001 0.01 0.1 1 ta=125 ? c ta=75 ? c ta=25 ? c ta= -25 ? c v gs = 4.0v pulsed 0.01 0.1 1 0.001 0.01 0.1 1 ta= -25 ? c ta=25 ? c ta=75 ? c ta=125 ? c v ds = 10v pulsed fig.5 static drain-source on-state resistance vs. drain current ( ii ) fig.6 static drain-source on-state resistance vs. drain current ( iii ) fig.7 static drain-source on-state resistance vs. drain current ( iv ) fig.9 forward transfer admittance vs. drain current drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] forward transfer admittance : |yfs| [s] drain-current : i d [a] fig.8 static drain-source on-state resistance vs. drain current ( iv ) drain-current : i d [a] static drain-source on-state resistance : r ds (on)[ ?? ] 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v ta= 25 ? c pulsed fig.1 typical output characteristics ( i ) drain current : i d [a] drain-source voltage : v ds [v] 0 0.1 0.2 0.3 0.4 0.5 0246810 v gs = 2.5v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v ta= 25 ? c pulsed fig.2 typical output characteristics ( ii ) drain-source voltage : v ds [v] drain current : i d [a] 0.0001 0.001 0.01 0.1 1 0 0.5 1 2 3 ta=125 ? c ta=75 ? c ta=25 ? c ta= -25 ? c v ds = 10v pulsed fig.3 typical transfer characteristics drain current : i d [a] gate-source voltage : 0.1 1 10 100 0.001 0.01 0.1 1 v gs = 2.5v v gs = 4.0v v gs = 4.5v v gs = 10v ta= 25 ? c pulsed fig.4 static drain-source on-state resistance vs. drain current ( i ) static drain-source on-state resistance : r ds (on)[ ?? ] v gs [v] drain-current : i d [a] 1.5 2.5
4/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.04 - rev.a data sheet RSM002N06 0 2 4 6 8 02.557.510 i d = 0.25a i d = 0.01a 1 10 100 0.01 0.1 1 10 100 1 10 100 1000 0.01 0.1 1 t f 0.001 0.01 0.1 1 00.511.5 ta=125 ? c ta=75 ? c ta=25 ? c ta=-25 ? c fig.10 reverse drain current vs. sourse-drain voltage fig.11 static drain-source on-state resistance vs. gate source voltage fig.13 typical capacitance vs. drain-source voltage fig.12 switching characteristics reverse drain current : is [a] source-drain voltage : v [v] static drain-source on-state resistance : r ds (on)[ ?? ] gate-source voltage : v gs [v] switching time : t [ns] drain-current : i d [a] drain-source voltage : capacitance : c [pf] v gs =0v pulsed ta=25 ? c f=1mhz v gs =0v t r ciss coss crss ta=25 ? c pulsed t d(off) t d(on) ta=25 ? c v dd = 30v v gs =10v r g =10 ?? pulsed v [v] sd ds
5/5 www.rohm.com c 2010 rohm co., ltd. all rights reserved. 2010.04 - rev.a data sheet RSM002N06 ? measurement circuits ? ? notice ? this product might cause chip aging and breakdow n under the large electrified environment. please consider to design esd protection circuit. f ig.1-1 switching time measurement circu it v gs r g v d s d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off)
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